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In the evolving automotive landscape, the demand for efficient and reliable power solutions is significant. Infineon Technologies is at the forefront of this innovation, offering an extensive portfolio of automotive MOSFETs designed to meet the varying requirements of modern vehicles. With a focus on quality and performance, Infineon’s products are built to withstand the rigorous standards of the automotive industry.
This article explores two key technologies developed by Infineon: the OptiMOS™ series and the CoolSiC™ MOSFETs. Each technology showcases unique advantages that cater to the needs of automotive applications, ensuring enhanced power efficiency and reliability.
The OptiMOS™ series: setting new standards
The OptiMOS™ range, available in voltage ratings from 30 V to 800 V, is tailored for various automotive applications. Infineon’s latest OptiMOS™ 7 trench technology significantly improves power efficiency by minimizing switching losses while maximizing the safe operating area (SOA) for high-current applications. These advancements lead to robust performance within a compact design, ideal for space-constrained environments.
Longevity program for long-term planning
Infineon recognizes the importance of long-term production planning in the automotive sector. To address this, the company has introduced a comprehensive longevity program for its OptiMOS™ MOSFETs. This initiative provides customers with valuable insights into product availability and lifecycle management, critical for manufacturers focused on reliability and sustained performance throughout the vehicle’s lifespan.
Additionally, the OptiMOS™ technology is supported by various robust packaging options, including both leaded and lead-less designs. These packages are engineered to meet the specific demands of automotive applications, ensuring compatibility with different board configurations.
Exploring the CoolSiC™ MOSFET technology
Transitioning towards a more energy-efficient future, the CoolSiC™ MOSFET technology represents a significant leap forward in power semiconductor design. Ranging from 400 V to 3300 V, these silicon carbide MOSFETs offer exceptional performance advantages over traditional silicon-based solutions. The CoolSiC™ devices enable higher efficiency levels and improved thermal management, resulting in reduced cooling requirements and enhanced reliability.
Advantages of CoolSiC™ MOSFETs
One standout feature of the CoolSiC™ series is its minimal gate charge and low device capacitance, contributing to lower switching losses. Additionally, these MOSFETs exhibit temperature-independent performance, eliminating concerns over variable operating conditions. The intrinsic diode integrated within the CoolSiC™ MOSFETs boasts a low reverse recovery charge, further enhancing efficiency.
Infineon’s CoolSiC™ technology is particularly well-suited for high-frequency applications, making it ideal for sectors such as photovoltaic inverters, electric vehicle charging systems, and industrial power supplies. The various module configurations, including half-bridge and sixpack designs, provide flexibility for system designers looking to optimize their layouts.
Driving automotive innovation
As the automotive industry embraces electrification and enhanced power systems, Infineon’s OptiMOS™ and CoolSiC™ technologies are paving the way for future innovations. With a commitment to producing high-quality, reliable products, Infineon continues to support automotive manufacturers in achieving their performance goals while addressing the challenges of a rapidly changing market.
The advancements in MOSFET technology offered by Infineon not only fulfill the immediate needs of automotive applications but also lay the groundwork for a more energy-efficient and sustainable future in transportation.